VCE Collector to Emitter Voltage V GAIN BANDWIDTH PRODUCT vs. TA Ambient Temperature ☌ COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE 3 VĠ.5 VBE Base to Emitter Voltage V DC CURRENT GAIN vs.
#COLLECTOR CURRENT VS VCE PC1D FREE#
AMBIENT TEMPERATURE Free Air 40 100 COLLECTOR CURRENT vs. *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.ġ50 TOTAL POWER DISSIPATION vs. 0.1 150 GHz pF dB UNIT TEST CONDITIONS VCB = 0 VEB = 0 VCE 10 mA*1 VCE = 10 mA, = 2 GHz VCE IE MHz*2 VCE = 10 mA, = 2 GHz VCE = 3 mA, = 2 GHz TD-2401) Date Published July 1995 PĬHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL I CBO IEBO hFE fT Cre 21e|2 NF MIN. Unit sample quantity shall be 50 pcs.Ĭollector to Base Voltage Emitter to Base Voltage Total Power Dissipation Collector Current Collector to Emitter Voltage VCEO VEBO PT T stg Tj IC VCBOĭocument No. * Please contact a sales representative, if you require evaluation sample. Pin3(Collector) face to perforation side of the tape. VCE = 10 mA, = 2 GHz) Ultra Super Mini Mold Package.Įmbossed tape 8 mm wide. The is an NPN epitaxial silicon transistor designed for use in low noise and small signal
Low noise figure, high gain, and high current capability achieve a very wide This is achieved by direct nitride passivated base surface process (NEST3Īmplifiers from VHF band to L band. NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDĭynamic range and excellent linearity.
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